JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
MMBT4403 TRANSISTOR (PNP)
FEATURES
Switching transistor
1. BASE
2. EMITTER
3. COLLECTOR
MARKING :2T
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.6
A
PC
Collector Power Dissipation
0.3
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100μA , IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA , IB=0
-40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-35V, IE=0
-0.1
μA
Collector cut-off current
ICEO
VCE=-35 V, IB=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-0.1
μA
DC current gain
hFE
VCE=-2V, IC= -150mA
100
300
Collector-emitter saturation voltage
VCE(sat)
IC=-150mA, IB=-15mA
-0.4
V
Base-emitter saturation voltage
VBE(sat)
IC=- 150mA, IB=-15mA
-0.95
V
VCE= -10V, IC= -20mA
Transition frequency
fT
Detay time
td
VCC=-30V,VEB=-2V,
15
ns
Rise time
tr
IC=-150mA.IB1=-15mA
20
ns
Storage time
ts
VCC=-30V, IC=-150mA.
225
ns
Fall time
tf
IB1= IB2=-15mA
30
ns
f = 100MHz
200
MHz
B,Jun,2012
Typical Characterisitics
Static Characteristic
-200
——
IC
COMMON EMITTER
VCE=-2V
hFE
Ta=100℃
DC CURRENT GAIN
COLLECTOR CURRENT
COMMON
EMITTER
Ta=25℃
-0.9mA
-0.8mA
-0.7mA
-150
hFE
1000
-1mA
IC
(mA)
-250
MMBT4403
-0.6mA
-0.5mA
-100
-0.4mA
-0.3mA
-50
Ta=25℃
100
-0.2mA
IB=-0.1mA
10
-0
-0
-2
-4
-6
COLLECTOR-EMITTER VOLTAGE
VCEsat
-700
——
VCE
-1
IC
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
IC
(mA)
IC
——
β=10
-300
Ta=100℃
-100
Ta=25℃
-30
Ta=25℃
-0.8
Ta=100℃
-0.4
-0.0
-3
-1
-600
-100
VBEsat
-1.2
β=10
-10
-10
COLLECTOR CURRENT
(V)
-10
-100
-30
COLLECTOR CURRENT
IC
-600
IC
-600
-1
-3
(mA)
-10
-100
-30
COLLECTOR CURRENT
—— VBE
Cob/ Cib
50
——
IC
-600
(mA)
VCB/ VEB
f=1MHz
IE=0/IC=0
(pF)
-10
C
Ta=100℃
Ta=25℃
-1
-0.1
-0.0
-0.4
Cob
10
CAPACITANCE
COLLECTOR CURRENT
Ta=25℃
Cib
-100
IC
(mA)
COMMON EMITTER
VCE=-2V
-0.8
1
-0.1
-1.2
-1
fT
-600
-10
REVERSE VOLTAGE
BASE-EMMITER VOLTAGE VBE (V)
—— IC
PC
400
——
V
-30
(V)
Ta
VCE=-10V
COLLECTOR POWER DISSIPATION
PC (mW)
TRANSITION FREQUENCY
fT
(MHz)
Ta=25℃
-100
-10
300
200
100
0
-1
-10
-3
COLLECTOR CURRENT
IC
(mA)
-30
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
B,Jun,2012
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